S T M6930
S amHop Microelectronics C orp.
Arp,20 2005 ver1.2
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
55V
F E AT UR E S
( m
W
) Max
I
D
4.8A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
45 @ V
G S
= 10V
65 @ V
G S
= 4.5V
R ugged and reliable.
S urface Mount P ackage.
D
1
8
D
1
7
D
2
6
D
2
5
S O-8
1
1
2
3
4
S
1
G
1
S
2
G
2
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage R ating
Drain-S ource Voltage
Gate-S ource Voltage
a
S ymbol
Vspike
d
V
DS
V
GS
25 C
70 C
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
60
55
25
4.8
4.1
30
1.7
2
1.44
-55 to 150
Unit
V
V
V
A
A
A
A
W
C
Drain C urrent-C ontinuous @ Ta
-P ulsed
b
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
a
Ta= 25 C
Ta=70 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
JA
1
62.5
C /W
S T M6930
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
c
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 44V, V
GS
= 0V
V
GS
= 25V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
= 4.5A
V
GS
=4.5V, I
D
= 4A
V
DS
= 5V, V
GS
= 10V
V
DS
= 5V, I
D
= 4.5A
Min Typ
C
Max Unit
55
1
V
uA
100 nA
1.0
1.9
35
55
20
9
900
80
60
2
19
5
22
12
19
9
4
4.5
25
7
29
16
25
12
5
6
1170
104
78
2.5
45
65
V
m ohm
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
C
IS S
C
OS S
C
RSS
Rg
c
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 30V
I
D
= 4.8 A
V
GS
= 10V
R
GE N
= 6 ohm
V
DS
=48V, I
D
=4.8A,V
GS
=10V
V
DS
=48V, I
D
=4.8A,V
GS
=4.5V
V
DS
=48V, I
D
= 4.8 A
V
GS
=10V
2
ns
ns
ns
ns
nC
nC
nC
nC
S T M6930
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.8
1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external R g=6 ohm and tf < tf max
20
V
G S
=10,9,8,7,6,5V
16
20
25
25 C
-55 C
I
D
, Drain C urrent(A)
12
I
D
, Drain C urrent (A)
V
G S
=4V
T j=125 C
15
8
10
4
V
G S
=3V
0
0
1
2
3
4
5
6
5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1500
1.6
F igure 2. Trans fer C haracteris tics
V
G S
=10V
R
DS (ON)
, On-R es is tance
Normalized
1250
1.4
1.2
1.0
0.6
0.4
0
-50
C , C apacitance (pF )
V
G S
=10V
I
D
=4.8A
1000
750
500
250
0
C rs s
0
5
10
15
20
C is s
C os s
25
30
-25
0
25
50
75
100
125 150
T j=( C )
V
DS
, Drain-to S ource Voltage (V )
I
D
, Drain C urrent(A)
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
S T M6930
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
ID=250uA
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
15
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
g
F S
, T rans conductance (S )
Is , S ource-drain current (A)
20
12
9
6
3
0
0
5
10
V
DS
=5V
15
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
10
8
6
4
2
0
0
3
6
9
12 15
18
21 24
Qg, T otal G ate C harge (nC )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
40
10
R
D
(
)
ON
L im
it
V
G S
, G ate to S ource V oltage (V )
V
DS
=48V
I
D
=4.8A
I
D
, Drain C urrent (A)
S
10
10
1s
DC
ms
0m
s
11
0.1
0.03
0.1
V
G S
=10V
S ingle P ulse
T
A
=25 C
1
10 30
60
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
4
F igure 10. Maximum S afe
O perating Area
S T M6930
V
DD
t
on
t
off
t
r
90%
5
V
G S
R
GE N
V
IN
D
G
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVE R TE D
90%
S
V
IN
50%
10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
10
F igure 12. S witching Waveforms
Normalized Transient
Thermal Resistance
1
0.5
0.2
0.1
P
DM
0.05
0.02
0.01
on
0.1
t
1
1.
2.
3.
4.
t
2
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
R
thJ A
(t)=r (t) * R
thJ A
R
thJ A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
thJ A
(t)
Duty C ycle, D=t
1
/t
2
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
嵌入式系统
